BCR3AS-8 データシートの表示（PDF） - MITSUBISHI ELECTRIC
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BCR3AS-8
MITSUBISHI ELECTRIC
BCR3AS-8 Datasheet PDF : 5 Pages
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GATE CHARACTERISTICS
102
7
5
3
2
101
PGM = 3W
7
5
IGM =
3
PG(AV) = 0.3W
0.5A
2
100
IFGT I, IRGT III
7
IRGT I
5
3
2
10–1
VGD = 0.2V
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM ON-STATE POWER
DISSIPATION
10
8
360°
CONDUCTION
6 RESISTIVE,
INDUCTIVE
LOADS
4
2
0
0
1
2
3
4
5
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
7
TYPICAL EXAMPLE
5
4
IRGT III
3
2
102
IFGT I, IRGT I
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
Feb.1999
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