DTC115TL-AE3-R データシートの表示（PDF） - Unisonic Technologies

部品番号

コンポーネント説明

一致するリスト

DTC115TL-AE3-R

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTC115T

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless others specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

Emitter-base voltage

VCEO

50

V

VEBO

5

V

Collector current

Collector Power dissipation

IC

100

mA

PC

200

mW

Junction temperature

TJ

+150

°C

Storage temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)

PARAMETER

SYMBOL

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

BVCBO

BVCEO

Emitter-Base Breakdown Voltage

Collector Cutoff Current

BVEBO

ICBO

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

IEBO

VCE(SAT)

DC Current transfer Ratio

hFE

Input Resistance

R1

Transition Frequency

fT

Note: Transition frequency of the device.

TEST CONDITIONS

IC=50μA

IC=1mA

IE=50μA

VCB=50V

VEB=4V

IC=1mA, IB=0.1mA

VCE=5V, IC=1mA

VCE=10V, IE=-5mA, f=100MHz

MIN TYP MAX UNIT

50

V

50

V

5

V

0.5 μA

0.5 μA

0.3 V

100 250 600

70 100 130 KΩ

250

MHZ

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-063.C

Share Link: