RMWP38001 データシートの表示（PDF） - Raytheon Company

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RMWP38001

37-40 GHz Power Amplifier MMIC

Raytheon Company 

RMWP38001

37-40 GHz Power Amplifier MMIC

PRODUCT INFORMATION

Recommended

Procedure

for Biasing and

Operation

CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE

AMPLIFIER CHIP.

The following sequence of steps must be followed to properly test the amplifier:

Step 1: Turn off RF input power.

Step 2: Connect the DC supply grounds to the grounds

of the chip carrier.

Slowly apply negative gate bias supply voltage

of -1.5 V to Vg.

Step 3: Slowly apply positive drain bias supply voltage

of +4 V to Vd.

Step 4: Adjust gate bias voltage to set the quiescent

current of Idq=250 mA.

Step 5: After the bias condition is established, RF input

signal may now be applied at the appropriate

frequency band.

Step 6: Follow turn-off sequence of:

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd),

(iii) Turn down and off gate bias voltage (Vg).

Performance

Data

RMWP38001, 38 GHz Power Amplifier Typical On-Wafer Measurements

IDQ = 250 mA VDD = 4 V

26

S21

24

22

S22

20

18

16

14

12

10

S11

8

6

4

2

0

35

35.5

36

36.5

37

37.5

38

38.5

39

39.5

Frequency (GHz)

0

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

-22

-24

-26

40

www.raytheon.com/micro

Characteristic performance data and specifications are subject to change without notice.

Revised March 14, 2001

Page 4

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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