P4C163-25CM データシートの表示（PDF） - Performance Semiconductor
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P4C163-25CM Datasheet PDF : 8 Pages
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P4C163/163L
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Symbol
Parameter
-25
-35
-45
Unit
Min Max Min Max Min Max
tRC
Read Cycle Time
tAA
Address Access Time
tAC
Chip Enable
Access Time
tOH
Output Hold from
Address Change
tLZ
Chip Enable to
Output in Low Z
t
Chip Disable to
HZ
Output in High Z
25
35
45
ns
25
35
45 ns
25
35
45 ns
3
3
3
ns
3
3
3
ns
10
15
20 ns
tOE
Output Enable
Low to Data Valid
13
18
20 ns
tOLZ
Output Enable
Low to Low Z
t
Output Enable
OHZ
High to High Z
tPU
Chip Enable to
Power Up Time
3
3
3
ns
12
15
20 ns
0
0
0
ns
tPD
Chip Disable to
Power Down Time
20
20
25 ns
READ CYCLE NO. 1 (OE CONTROLLED)(5)
(9)
t RC
ADDRESS
t AA
OE
t OE
t OH
CE1
tOLZ (8)
CE2
DATA OUT
t AC
tLZ (8)
t
(8)
OHZ
t
(8)
HZ
Notes:
5. WE is HIGH for READ cycle.
6.
CE
1
is
LOW,
CE2
is
HIGH
and
OE
is
LOW
for
READ
cycle.
7.
ADDRESS
must
be
valid
prior
to,
or
coincident
with
CE
1
transition
LOW and CE2 transition HIGH.
8. Transition is measured ± 200mV from steady state voltage prior to
change, with loading as specified in Figure 1. This parameter is
sampled and not 100% tested.
112
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