DDTC115GE-7-F データシートの表示（PDF） - Diodes Incorporated.
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DDTC115GE-7-F Datasheet PDF : 3 Pages
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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Symbol Min
Typ
Max
BVCBO
50
⎯
⎯
BVCEO
50
⎯
⎯
Unit
V
V
Emitter-Base Breakdown Voltage
BVEBO
5
⎯
⎯
V
Collector Cutoff Current
Emitter Cutoff Current
DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE
Bleeder Resistor (R2) Tolerance
Gain-Bandwidth Product*
ICBO
⎯
⎯
0.5
300
580
IEBO
140
65
⎯
260
130
30
58
VCE(sat)
⎯
⎯
0.3
30
hFE
56
68
⎯
⎯
82
ΔR2
-30
⎯
+30
fT
⎯
250
⎯
μA
μA
V
⎯
%
MHz
* Transistor – For Reference Only
250
TYPICAL CURVES – DDTC114GE
1
IC/IB = 10
Test Condition
IC = 50μA
IC = 1mA
IE = 720μA, DDTC114GE
IE = 330 μA, DDTC124GE
IE = 160 μA, DDTC144GE
IE = 72 μA, DDTC115GE
VCB = 50V
VEB = 4V
IC = 10mA, IB = 0.5mA
IC = 5mA, VCE = 5V
⎯
VCE = 10V, IE = -5mA, f = 100MHz
200
150
100
0.1
0.01
25°C
75°C
-25°C
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
1,000
VCE = 10
0.001
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Fig. 2 VCE(SAT) vs. IC
5
IE = 0mA
4
3
100
2
1
10
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
DS30316 Rev. 8 – 2
0
100
0
2 of 3
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5
10
15
20
25
30
VR, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
DDTC (R2-ONLY SERIES) E
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