GP800NSM33 データシートの表示（PDF） - Dynex Semiconductor
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GP800NSM33 Datasheet PDF : 9 Pages
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GP800NSM33
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
t
d(off)
tf
E
OFF
td(on)
tr
EON
Q
rr
Irr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
td(off)
tf
EOFF
t
d(on)
tr
EON
Qrr
I
rr
EREC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
IC = 800A
VGE = ±15V
V = 1800V
CE
RG(ON) = = 3.3Ω
R
G(OFF)
=
6.8Ω
CGE = 440nF, L ~ 100nH
IF = 800A, VR = 1800V,
dIF/dt = 3600A/µs-1
Min. Typ. Max. Units
-
3.2
-
µs
-
0.7
-
µs
-
1
-
J
-
1.1
-
µs
-
0.4
-
µs
-
1.2
-
J
-
750
-
µC
-
400
-
A
-
0.45
-
J
Test Conditions
IC = 800A
VGE = ±15V
VCE = 1800V
R
G(ON)
=
=
3.3Ω
RG(OFF) = 6.8Ω
C = 440nF, L ~ 100nH
GE
IF = 800A, VR = 1800V,
dIF/dt = 3000A/µs-1
Min. Typ. Max. Units
-
3.4
-
µs
-
1.1
-
µs
-
1.5
-
J
-
1.1
-
µs
-
0.5
-
µs
-
1.5
-
J
-
800
-
µC
-
650
-
A
-
0.7
-
J
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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