CTN635 データシートの表示（PDF） - Continental Device India Limited
部品番号
コンポーネント説明
一致するリスト
CTN635
Continental Device India Limited
CTN635 Datasheet PDF : 4 Pages
| |||
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640
ELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified)
Characteristic
Collector-Emitter Voltage
IC=10mA, IB=0
635, 636
637, 638
639, 640
Symbol
BVCEO
Min.
45
60
80
Typ.
-
-
-
Max.
-
-
-
Unit
V
V
V
Collector-Base Voltage
635, 636 BVCBO
45
IC=100µA, IE=0
637, 638
60
639, 640
100
-
-V
-
-V
-
-V
Emitter-Base Voltage
IE=10µA, IC=0
Collector Cutoff Current
VCB=30V, IE=0
VCB=30V, IE=0, Ta=125°C
Base Emitter On Voltage
IC=500mA, VCE=2V
Collector-Emitter
(Sat) Voltage
IC=500mA, IB=50mA
BVEBO
5
ICBO
-
VBE(on)*
-
VCE(sat)*
-
-
-V
-
100 nA
-
10 µA
-
1.0 V
-
0.5 V
D.C. Current Gain
IC=5mA, VCE=2V
635, 636 hFE
IC=150mA, VCE=2V* 637, 638
639, 640
IC=500mA, VCE=2V*
25
-
-
40
-
160
40
-
160
25
-
-
DYNAMIC CHARACTERISTICS
Input Capacitance
VBE=0.5V, IC=0,
NPN
Cib
f=1MHz
PNP
Input Capacitance
VCB=10V, IC=0,
NPN
Cob
f=1MHz
PNP
Transition Frequency
IC=10mA, VCE=5V, N P N
fT
f=35MHz
PNP
-
50
-
110
-
7
-
9
-
130
-
50
- pF
- pF
- pF
- pF
- MHz
- MHz
* Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
Continental Device India Limited
Data Sheet
Page 2 of 4
Share Link: