CSD313 データシートの表示（PDF） - Continental Device India Limited
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CSD313 Datasheet PDF : 3 Pages
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CSB507, CSD313
Collector current
Collector current (Peak value)
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
From junction to case
IC
ICM
Ptot
Tj
Tstg
Rth j–c
max. 3.0 A
max. 8.0 A
max.
30 W
max. 150 ºC
–65 to +150 ºC
=
4.17 °C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 20V
IB = 0; VCE = 60V
Emitter cut-off current
IC = 0; VEB = 4V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 2 A; IB = 0.2 A
Base emitter on voltage
IC = 1A; VCE = 2V
D.C. current gain
IC = 0.1A; VCE = 2V
ICBO
ICEO
IEBO
VCEO
VCBO
VEBO
VCEsat*
VBE(on)*
hFE*
max.
max.
max.
min.
min.
min.
max.
max.
min.
0.1 mA
5.0 mA
1.0 mA
60 V
60 V
5.0 V
1.0 V
1.5 V
40
IC = 1A; VCE = 2V**
Transition frequency
IC = 500 mA; VCE = 5V
hFE*
min.
40
max. 320
fT
typ.
8 MHz
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2.0%.
** hFE classification: C: 40-80 D: 60-120 E: 100-200 F: 160-320
Continental Device India Limited
Data Sheet
Page 2 of 3
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