ISL9K30120G3 データシートの表示（PDF） - Fairchild Semiconductor
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ISL9K30120G3 Datasheet PDF : 6 Pages
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Package Marking and Ordering Information
Device Marking
K30120G3
Device
ISL9K30120G3
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics (per leg) TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 1200V
TC = 25°C
TC = 125°C
-
- 100 µA
-
- 1.0 mA
On State Characteristics
VF Instantaneous Forward Voltage
IF = 30A
TC = 25°C
TC = 125°C
- 2.8 3.3 V
- 2.6 3.1 V
Dynamic Characteristics
CJ Junction Capacitance
VR = 10V, IF = 0A
- 115 -
pF
Switching Characteristics
trr
Reverse Recovery Time
trr
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
trr
S
IRM(REC)
QRR
dIM/dt
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (tb/ta)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during tb
IF = 1A, dIF/dt = 100A/µs, VR = 15V
-
IF = 30A, dIF/dt = 100A/µs, VR = 15V -
IF = 30A,
-
dIF/dt = 200A/µs,
-
VR = 780V, TC = 25°C
-
IF = 30A,
-
dIF/dt = 200A/µs,
-
VR = 780V,
-
TC = 125°C
-
IF = 30A,
-
dIF/dt = 1000A/µs,
-
VR = 780V,
-
TC = 125°C
-
-
45 56 ns
80 100 ns
269 -
ns
7.5 -
A
930
-
nC
529 -
ns
6.2 -
-
11
-
A
3.0
-
µC
260 -
ns
4.8 -
-
30
-
A
3.4
-
µC
520 - A/µs
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-247
Thermal Resistance Junction to Ambient TO-247
-
- 0.75 °C/W
-
-
30 °C/W
©2002 Fairchild Semiconductor Corporation
ISL9K30120G3 Rev. A
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