CR8AM-12 データシートの表示（PDF） - Mitsumi
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CR8AM-12 Datasheet PDF : 5 Pages
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MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
32
28
24
θ = 30° 60° 90° 120°
20
16
180°
12
8
θθ
4
360°
0
RESISTIVE LOADS
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
32
28
24
120° 180°
θ = 30° 60° 90° 270°
20
16
DC
12
8
θ
4
RESISTIVE, 360°
0
INDUCTIVE LOADS
0 2 4 6 8 10 12 14 16
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR8AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
200
180
θθ
160
360°
140
RESISTIVE
120
LOADS
100
80
60 θ = 30° 90° 180°
40
60° 120°
20
0
0 2 4 6 8 10 12 14 16 18 20
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
200
180
θ
160
360°
140
RESISTIVE,
120
INDUCTIVE
100
LOADS
80
60 θ = 30° 90° 180° DC
40
60° 120° 270°
20
0
0 2 4 6 8 10 12 14 16 18 20
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
Tj = 125°C
140
TYPICAL
EXAMPLE
120
IGT (25°C)
# 1 4.7mA
100
# 2 7.2mA
80
#2
60
40
#1
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Feb.1999
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