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IXFR90N30(2013) データシートの表示(PDF) - IXYS CORPORATION

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IXFR90N30
(Rev.:2013)
IXYS
IXYS CORPORATION IXYS
IXFR90N30 Datasheet PDF : 3 Pages
1 2 3
HiPerFETTM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFR90N30
VDSS =
ID25 =
RDS(on)
trr
300V
75A
36mΩ
250ns
ISOPLUS247
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Maximum Ratings
300
V
300
V
±20
V
±30
V
75
A
360
A
90
A
3
J
5
V/ns
417
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
50/60 Hz, 1 Minute
2500
V~
Mounting Force
20..120/4.5..27
N/lb
5
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 45A, Note 1
Characteristic Values
Min. Typ. Max.
300
V
2.0
4.5 V
±100 nA
TJ = 125°C
100 μA
2 mA
36 mΩ
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 2500V~ Electrical Isolation
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low RDS(ON) and QG
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC & DC Motor Controls
© 2013 IXYS CORPORATION, All Rights Reserved
DS98764A(6/13)

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