BZX84C33LT1/T3G データシートの表示（PDF） - ON Semiconductor
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BZX84C33LT1/T3G Datasheet PDF : 7 Pages
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BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G
Series
ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
BZX84C2V4LT1G
VZ1 (Volts)
@ IZT1 = 5 mA
(Note 3)
Device
Marking Min Nom Max
Z11
2.2 2.4
2.6
ZZT1
(W)
@ IZT1 =
5 mA
100
VZ2 (V)
@ IZT2 = 1 mA
(Note 3)
Min Max
1.7
2.1
ZZT2
(W)
@ IZT2 =
1 mA
VZ3 (V)
@ IZT3 = 20 mA
(Note 3)
Min Max
ZZT3
(W)
@ IZT3 =
20 mA
600
2.6
3.2
50
Max Reverse
Leakage
Current
IR
mA
@
VR
Volts
qVZ
(mV/k)
@ IZT1 = 5 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
50
1
−3.5
0
450
BZX84C2V7LT1G
Z12
2.5 2.7
2.9
100
1.9
2.4
600
3
3.6
50
20
1
−3.5
0
450
BZX84C3V0LT1G
Z13
2.8
3
3.2
95
2.1
2.7
600
3.3
3.9
50
10
1
−3.5
0
450
BZX84C3V3LT1G
Z14
3.1 3.3
3.5
95
2.3
2.9
600
3.6
4.2
40
5
1
−3.5
0
450
BZX84C3V6LT1G
Z15
3.4 3.6
3.8
90
2.7
3.3
600
3.9
4.5
40
5
1
−3.5
0
450
BZX84C3V9LT1G
Z16
3.7 3.9
4.1
90
2.9
3.5
600
4.1
4.7
30
3
1
−3.5 −2.5
450
BZX84C4V3LT1G
W9
4
4.3
4.6
90
3.3
4
600
4.4
5.1
30
3
1
−3.5
0
450
BZX84C4V7LT1/T3G
Z1
4.4 4.7
5
80
3.7
4.7
500
4.5
5.4
15
3
2
−3.5 0.2
260
BZX84C5V1LT1/T3G
Z2
4.8 5.1
5.4
60
4.2
5.3
480
5
5.9
15
2
2
−2.7 1.2
225
BZX84C5V6LT1/T3G
Z3
5.2 5.6
6
40
4.8
6
400
5.2
6.3
10
1
2
−2.0 2.5
200
BZX84C6V2LT1/T3G
Z4
5.8 6.2
6.6
10
5.6
6.6
150
5.8
6.8
6
3
4
0.4 3.7
185
BZX84C6V8LT1/T3G
Z5
6.4 6.8
7.2
15
6.3
7.2
80
6.4
7.4
6
2
4
1.2 4.5
155
BZX84C7V5LT1G
Z6
7
7.5
7.9
15
6.9
7.9
80
7
8
6
1
5
2.5 5.3
140
BZX84C8V2LT1G
Z7
7.7 8.2
8.7
15
7.6
8.7
80
7.7
8.8
6
0.7
5
3.2 6.2
135
BZX84C9V1LT1/T3G
Z8
8.5 9.1
9.6
15
8.4
9.6
100
8.5
9.7
8
0.5
6
3.8 7.0
130
BZX84C10LT1G
Z9
9.4 10 10.6
20
9.3 10.6
150
9.4 10.7
10
0.2
7
4.5 8.0
130
BZX84C11LT1G
Y1
10.4 11 11.6
20
10.2 11.6
150
10.4 11.8
10
0.1
8
5.4 9.0
130
BZX84C12LT1G
Y2
11.4 12 12.7
25
11.2 12.7
150
11.4 12.9
10
0.1
8
6.0 10.0
130
BZX84C13LT1G
Y3
12.4 13 14.1
30
12.3
14
170
12.5 14.2
15
0.1
8
7.0 11.0
120
BZX84C15LT1/T3G
Y4
13.8 15 15.6
30
13.7 15.5
200
13.9 15.7
20
0.05 10.5 9.2 13.0
110
BZX84C16LT1G
Y5
15.3 16 17.1
40
15.2
17
200
15.4 17.2
20
0.05 11.2 10.4 14.0
105
BZX84C18LT1/T3G
Y6
16.8 18 19.1
45
16.7
19
225
16.9 19.2
20
0.05 12.6 12.4 16.0
100
BZX84C20LT1G
Y7
18.8 20 21.2
55
18.7 21.1
225
18.9 21.4
20
0.05 14 14.4 18.0
85
BZX84C22LT1G
Y8
20.8 22 23.3
55
20.7 23.2
250
20.9 23.4
25
0.05 15.4 16.4 20.0
85
BZX84C24LT1G
Y9
22.8 24 25.6
70
22.7 25.5
250
22.9 25.7
25
0.05 16.8 18.4 22.0
80
Device*
BZX84C27LT1G
VZ1 Below
@ IZT1 = 2 mA
Device
Marking Min Nom Max
Y10 25.1 27 28.9
ZZT1
Below
@ IZT1 =
2 mA
VZ2 Below
@ IZT2 = 0.1 m-
A
Min Max
ZZT2
Below
@ IZT4 =
0.5 mA
VZ3 Below
@ IZT3 = 10 mA
Min Max
ZZT3
Below
@ IZT3 =
10 mA
80
25
28.9
300
25.2 29.3
45
Max Reverse
Leakage
Current
IR
mA
@
VR
(V)
0.05 18.9
qVZ
(mV/k) Below
@ IZT1 = 2 mA
Min Max
C (pF)
@ VR = 0
f = 1 MHz
21.4 25.3
70
BZX84C30LT1G
Y11
28
30
32
80
27.8
32
300
28.1 32.4
50
0.05 21 24.4 29.4
70
BZX84C33LT1/T3G
Y12
31
33
35
80
30.8
35
325
31.1 35.4
55
0.05 23.1 27.4 33.4
70
BZX84C36LT1G
Y13
34
36
38
90
33.8
38
350
34.1 38.4
60
0.05 25.2 30.4 37.4
70
BZX84C39LT1G
Y14
37
39
41
130
36.7
41
350
37.1 41.5
70
0.05 27.3 33.4 41.2
45
BZX84C43LT1G
Y15
40
43
46
150
39.7
46
375
40.1 46.5
80
0.05 30.1 37.6 46.6
40
BZX84C47LT1G
Y16
44
47
50
170
43.7
50
375
44.1 50.5
90
0.05 32.9 42.0 51.8
40
BZX84C51LT1G
Y17
48
51
54
180
47.6
54
400
48.1 54.6
100
0.05 35.7 46.6 57.2
40
BZX84C56LT1G
Y18
52
56
60
200
51.5
60
425
52.1 60.8
110
0.05 39.2 52.2 63.8
40
BZX84C62LT1G
Y19
58
62
66
215
57.4
66
450
58.2 67
120
0.05 43.4 58.8 71.6
35
BZX84C68LT1G
Y20
64
68
72
240
63.4
72
475
64.2 73.2
130
0.05 47.6 65.6 79.8
35
BZX84C75LT1G
Y21
70
75
79
255
69.4
79
500
70.3 80.2
140
0.05 52.5 73.4 88.6
35
3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.
*Includes SZ-prefix devices where applicable.
www.onsemi.com
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