CMPT930(2010) データシートの表示（PDF） - Central Semiconductor
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CMPT930 Datasheet PDF : 2 Pages
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CMPT930
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT930 type is
an NPN silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for small signal general purpose
and switching applications.
MARKING CODE: C1X
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
45
45
5.0
30
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=45V
ICEO
VCE=5.0V
ICES
VCE=45V
IEBO
VEB=5.0V
BVCBO
IC=10μA
45
BVCEO
IC=10mA
45
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=0.5mA
VBE(SAT) IC=10mA, IB=0.5mA
0.6
hFE
VCE=5.0V, IC=10μA
100
hFE
VCE=5.0V, IC=500μA
150
hFE
VCE=5.0V, IC=10mA
fT
VCE=5.0V, IC=500mA, f=30MHz
30
Cob
VCB=5.0V, IE=0, f=1.0MHz
NF
VCE=5.0V, IC=10mA, RS=10kΩ,
f=10Hz to 15.7kHz
MAX
10
10
10
10
1.0
1.0
300
600
8.0
3.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
nA
nA
V
V
V
V
V
MHz
pF
dB
R5 (27-January 2010)
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