CM400DU-24NFJ データシートの表示（PDF） - Powerex

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CM400DU-24NFJ

Dual IGBTMOD™ NFJ-Series Module 400 Amperes/1200 Volts

Powerex 

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

CM400DU-24NFJ

Dual IGBTMOD™ NFJ-Series Module

400 Amperes/1200 Volts

Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Collector-Cutoff Current

Gate Leakage Current

ICES

IGES

VCE = VCES, VGE = 0V

±VGE = VGES, VCE = 0V

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

Forward Transfer Admittance

Input Capacitance

Output Capacitance

VGE(th)

VCE(sat)

|γfs|

Cies

Coes

IC = 40mA, VCE = 10V

IC = 400A, VGE = 15V, Tj = 25°C*3

IC = 400A, VGE = 15V, Tj = 125°C*3

IC = 400A, VCE = 10V*3

VCE = 10V, VGE = 0V

Reverse Transfer Capacitance

Total Gate Charge

Turn-on Delay Time

Cres

QG

td(on)

VCC = 600V, IC = 400A, VGE = 15V

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

Emitter-Collector Voltage

tr

td(off)

tf

trr*1

Qrr*1

VEC*1

VCC = 600V, IC = 400A,

VGE = ±15V, RG = 0.78Ω,

Inductive Load,

IE = 400A

IE = 400A, VGE = 0V*3

Internal Gate Resistance

External Gate Resistance

RGint

RG

Tc = 25°C, Per Switch

Thermal Resistance Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Rth(j-c)Q

Rth(j-c)D

Per IGBT Part*4

Per FWDi Part*4

Contact Thermal Resistance

Rth(c-f)

Case to Heatsink,

Thermal Grease Applied*4*5

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).

*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.

*4 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.

If using this value, thermal resistance of heatsink, Rth(f-a), should be measured just under the chips.

0

0

Min.

Typ.

Max. Units

—

—

1.0

mA

—

—

1.4

µA

4.5

6.0

7.5

Volts

—

5.0

6.5

Volts

—

5.0

—

Volts

120

—

—

S

—

—

63

nF

—

—

5.3

nF

—

—

1.2

nF

—

1800

—

nC

—

—

300

ns

—

—

100

ns

—

—

500

ns

—

—

150

ns

—

—

100

ns

—

7.0

—

µC

—

5.5

7.0

Volts

—

3.0

—

Ω

0.78

—

7.8

Ω

Min.

Typ.

Max. Units

—

—

0.051 K/W

—

—

0.093 K/W

—

0.02

—

K/W

31.4

44.7

Tr2

Tr2

Di2

Di2

Di1

Tr1

Di1

Tr1

35.0

48.2

LABEL SIDE

0

33.6 46.6

65.8 78.8

Each mark points to the center position of each chip.

Tr1 / Tr2: IGBT

Di1 / Di2: FWDi Tolerance ±1 mm

*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

12/11 Rev. 1

3

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