CM150DY-24NF データシートの表示（PDF） - Mitsumi

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CM150DY-24NF

IGBT MODULES HIGH POWER SWITCHING USE

Mitsumi 

MAXIMUM RATINGS (Tj = 25°C)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

Tj

Tstg

Viso

—

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Torque strength

Weight

G-E Short

C-E Short

DC, TC’ = 110°C*3

Pulse

Conditions

Pulse

TC = 25°C

Main Terminal to base plate, AC 1 min.

Main Terminal M5

Mounting holes M6

Typical value

MITSUBISHI IGBT MODULES

CM150DY-24NF

HIGH POWER SWITCHING USE

(Note 2)

(Note 2)

Ratings

1200

±20

150

300

150

300

780

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5

310

Unit

V

V

A

A

A

A

W

°C

°C

V

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

Parameter

Test conditions

Min.

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

VGE(th) Gate-emitter threshold voltage IC = 15mA, VCE = 10V

6

IGES

Gate leakage current

VGE = VGES, VCE = 0V

—

Tj = 25°C

—

VCE(sat) Collector-emitter saturation voltage Tj = 125°C

IC = 150A, VGE = 15V

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 600V, IC = 150A, VGE = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 600V, IC = 150A

—

td(off)

Turn-off delay time

VGE1 = VGE2 = 15V

—

tf

Turn-off fall time

RG = 2.1Ω, Inductive load switching operation

—

trr (Note 1) Reverse recovery time

IE = 150A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 150A, VGE = 0V

—

Rth(j-c)Q Thermal resistance*1

IGBT part (1/2 module)

—

Rth(j-c)R

FWDi part (1/2 module)

—

Rth(c-f)

Contact thermal resistance Case to fin, Thermal compound Applied*2 (1/2 module)

—

Rth(j-c’)Q Thermal resistance

Tc measured point is just under the chips

—

RG

External gate resistance

2.1

*1 : Tc measured point is shown in page OUTLINE DRAWING.

*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*3 : Tc’ measured point is just under the chips.

If you use this value, Rth(f-a) should be measured just under the chips.

Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

Limits

Typ.

Max. Unit

—

1

mA

7

—

1.8

2.0

—

—

—

1000

—

—

—

—

—

7.5

—

—

—

0.07

—

—

8

V

0.5

2.5

—

35

3

0.68

—

120

80

450

350

150

—

3.2

0.16

0.25

—

0.093*3

21

µA

V

nF

nF

nF

nC

ns

ns

ns

ns

ns

µC

V

°C/W

°C/W

°C/W

°C/W

Ω

Mar.2003

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