CM150DY-12NF データシートの表示（PDF） - Mitsumi

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CM150DY-12NF

HIGH POWER SWITCHING USE

Mitsumi 

MITSUBISHI IGBT MODULES

CM150DY-12NF

HIGH POWER SWITCHING USE

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol

VCES

VGES

IC

ICM

IE (Note 1)

IEM (Note 1)

PC (Note 3)

Tj

Tstg

Viso

—

—

—

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Torque strength

Weight

G-E Short

C-E Short

DC, TC’ =97°C*3

Pulse

Pulse

TC = 25°C

Conditions

(Note 2)

(Note 2)

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M5 screw

Mounting M6 screw

Typical value

Ratings

600

±20

150

300

150

300

590

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5

310

Unit

V

V

A

A

A

A

W

°C

°C

Vrms

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Parameter

ICES

Collector cutoff current

Test conditions

VCE = VCES, VGE = 0V

Limits

Min.

Typ.

—

—

VGE(th) Gate-emitter threshold voltage IC = 15mA, VCE = 10V

5

6

IGES

Gate leakage current

±VGE = VGES, VCE = 0V

—

VCE(sat) Collector-emitter saturation voltage IC = 150A, VGE = 15V

Tj = 25°C

—

Tj = 125°C

—

Cies

Input capacitance

—

Coes

Output capacitance

VCE = 10V

—

Cres

Reverse transfer capacitance VGE = 0V

—

QG

Total gate charge

VCC = 300V, IC = 150A, VGE = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VCC = 300V, IC = 150A

—

td(off)

Turn-off delay time

VGE = ±15V

—

tf

Turn-off fall time

RG = 4.2Ω, Inductive load

—

trr (Note 1) Reverse recovery time

IE = 150A

—

Qrr (Note 1) Reverse recovery charge

—

VEC(Note 1) Emitter-collector voltage

IE = 150A, VGE = 0V

—

Rth(j-c)Q Thermal resistance*1

IGBT part (1/2 module)

—

Rth(j-c)R

FWDi part (1/2 module)

—

Rth(c-f)

Contact thermal resistance

Case to heat sink, Thermal compound Applied*2 (1/2 module)

—

Rth(j-c’)Q Thermal resistance

Case temperature measured point is just under the chips

—

RG

External gate resistance

4.2

—

1.7

1.7

—

—

—

600

—

—

—

—

—

2.5

—

—

—

0.07

—

—

*1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.

*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

*3 : Case temperature (Tc’) measured point is just under the chips.

If you use this value, Rth(f-a) should be measured just under the chips.

Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

3. Junction temperature (Tj) should not increase beyond 150°C.

Max.

1

7.5

0.5

2.2

—

23

2.8

0.9

—

120

100

300

300

150

—

2.6

0.21

0.47

—

0.16*3

42

Unit

mA

V

µA

V

nF

nF

nF

nC

ns

ns

ns

ns

ns

µC

V

K/W

K/W

K/W

K/W

Ω

Feb. 2009

2

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