CM1200HA-50H データシートの表示（PDF） - MITSUBISHI ELECTRIC
部品番号
コンポーネント説明
一致するリスト
CM1200HA-50H Datasheet PDF : 4 Pages
| |||
PRELIMINARY NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
2400
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 25°C
VGE = 12V
2000 VGE = 13V
VGE = 14V
1600 VGE = 15V
VGE = 20V
VGE = 11V
1200
VGE = 10V
800
VGE = 9V
400
VGE = 8V
VGE = 7V
0
0
2
4
6
8
10
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
2400
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE = 10V
1600
1200
800
400
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0 400 800 1200 1600 2000 2400
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 2400A
6
IC = 1200A
4
2
IC = 480A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
7
5
Tj = 25°C
3
2
103
7
5
3
2
102
7
5
3
2
101
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE VS. VCE
(TYPICAL)
103
7
VGE = 0V, Tj = 25°C
5
Cies, Coes : f = 100kHz
3
Cres
: f = 1MHz
2
Cies
102
7
5
3
2
101
7
Coes
5
3
Cres
2
100
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2001
Share Link: 