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CM1200HA-24J データシートの表示(PDF) - Powerex

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CM1200HA-24J Datasheet PDF : 4 Pages
1 2 3 4
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM1200HA-24J
Single IGBTMOD™ H-Series Module
1200 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current** (Tj 150°C)
Maximum Collector Dissipation (Tc = 25°C) (Tj < 150°C)
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Mounting Torque G(E) Terminal M4
Module Weight (Typical)
Isolation Voltage, Main Terminal to Base Plate, AC 1 Min.
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
Viso
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter Current Voltage**
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VCES, VCE = 0V
IC = 120mA, VCE = 10V
IC = 1200A, VGE = 15V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 125°C
VCC = 600V, IC = 1200A, VGE = 15V
IE = 1200A, VGE = 0V
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Cies
Coes
Cres
td(on)
VGE = 0V, VCE = 10V
VCC = 600V, IC = 1200A,
Load
Switching
Rise Time
Turn-off Delay Time
tr
td(off)
VGE1 = VGE2 = 15V,
RG = 3.3, Resistive
Time
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
tf
Load Switching Operation
trr
IE = 1200A, diE/dt = –2400A/µs
Qrr
IE = 1200A, diE/dt = –2400A/µs
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case**
Rth(j-c)Q
Per IGBT
Thermal Resistance, Junction to Case**
Rth(j-c)R
Per FWDi
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
CM1200HA-24J
–40 to +150
–40 to +125
1200
±20
1200
2400*
1200
2400*
5800
95
40
15
1600
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Min.
Typ.
Max. Units
6
mA
0.5
µA
4.5
6.0
7.5
Volts
2.4
3.1
Volts
2.5
Volts
5000
nC
3.7
Volts
Min.
Typ.
Max. Units
200
nF
70
nF
40
nF
600
ns
1800
ns
1200
ns
1500
ns
300
ns
9.0
µC
Min.
Typ.
Max. Units
0.022 °C/W
0.050 °C/W
0.018 °C/W

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