CHV2270-98F(2007) データシートの表示（PDF） - United Monolithic Semiconductors

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CHV2270-98F
(Rev.:2007)

Fully Integrated Ku-band HBT VCO Low cost / High linearity

United Monolithic Semiconductors 

CHV2270

Typical Assembly and Bias Configuration

Ku-band HBT VCO

Prescaler line

>= 47pF

GND

>= 47pF

DC line

+V

>= 47pF

L_out

>= 47pF

µ-strip line

This drawing shows an example of assembly and bias configuration. All the transistors are internally

self-biased. Some external chip capacitors of at least 47pF are necessary for the positive supply

voltage. Pads to be power supplied are (VD1 xor VD2) and (VA1 xor VA2).

Prescaler outputs PRES4 and PRES64 must be AC coupled through an external serial capacitor

taking into account output frequency and internal impedance of 100Ω (Typically >120pF).

SET4 and SET64 longer bonding length to DC ground than 10mm must be compensated by

intermediate decoupling capacitor (Typically >120pF). Setting is done by DC load only.

For the RF pad the equivalent wire bonding inductance (diameter=25µm) have to be according to the

following recommendation:

Pin name

Equivalent inductance

Wire length (1)

RF

L_out < 0.3 nH

< 0.4 mm

(1) This value is the total length including the necessary loop from pad to pad.

Chip backside must be RF grounded.

Ref.: DSCHV22707117 -27 Apr 07

6/8

Specifications subject to change without notice

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