CF5029A データシートの表示（PDF） - Nippon Precision Circuits
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CF5029A Datasheet PDF : 7 Pages
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CF5029A
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply voltage range
Input voltage range
Output voltage range
Storage temperature range
Symbol
V DD
V IN
VOUT
T STG
Condition
Chip form
Rating
Unit
VSS −0.3 to VSS + 5.0
V
VSS − 0.3 to VDD + 0.3
V
VSS − 0.3 to VDD + 0.3
V
−65 to +150
°C
RECOMMENDED OPERATING CONDITIONS
fO = 16.777216MHz unless otherwise noted.
Parameter
Supply voltage
Input voltage
Operating temperature
Symbol
V DD
V IN
TOPR
Condition
Rating
Unit
min
typ
max
2.25
–
3.6
V
VSS
–
VDD
V
−40
+25
+85
°C
Current consumption and Output waveform with NPC’s standard crystal
C0
R1 [Ω]
L1 [mH]
C1 [fF]
C0 [pF]
5.6
7.45
12.67
3.40
L1 C1 R1
ELECTRICAL CHARACTERISTICS
DC Characteristics
VDD = 2.25 to 3.6V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
Operating current
consumption
Measurement cct 1,
VDD = 2.25 to 2.75V
–
IDD INHN = open or HIGH,
CL = 15pF
VDD = 2.75 to 3.6V
–
0.24
0.6
mA
0.42
1
mA
Standby current
IST Measurement cct 1, INHN = LOW
–
–
10
µA
HIGH-level output voltage VOH Measurement cct 3, VDD = 2.25 to 3.6V, IOH = 2mA VDD – 0.4 VDD – 0.15
–
V
LOW-level output voltage
VOL Measurement cct 3, VDD = 2.25 to 3.6V, IOL = 2mA
–
0.15
0.4
V
Output leakage current
IZ
Measurement cct 4,
INHN = LOW
VOH = VDD
VOL = VSS
–
–
10
µA
–
–
–10
µA
HIGH-level input voltage
VIH Measurement cct 5
0.7V DD
–
–
V
LOW-level input voltage
VIL Measurement cct 5
–
–
0.3V DD
V
INHN pull-up resistance
RPU1
RPU2
Measurement cct 6
INHN = VSS
INHN = 0.7VDD
0.4
–
4
MΩ
40
–
200
kΩ
Built-in capacitance
CG Design value. A monitor pattern on a wafer is tested.
5
CD Ta = 25°C
5
6
6
7
pF
7
pF
SEIKO NPC CORPORATION —3
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