CEPF634(2002) データシートの表示（PDF） - Chino-Excel Technology

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CEPF634
(Rev.:2002)

N-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology 

CEPF634/CEBF634

ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)

4

Parameter

Symbol Condition

Min Typ Max Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

ON CHARACTERISTICSa

BVDSS VGS = 0V, ID = 250µA 250

IDSS VDS = 250V, VGS = 0V

IGSS VGS =Ć30V, VDS = 0V

V

25 µA

Ć100 nA

Gate Threshold Voltage

VGS(th) VDS = VGS, ID = 250µA 2

4V

Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 5.1A

450 mΩ

On-State Drain Current

ID(ON)

Forward Transconductance

gFS

DYNAMIC CHARACTERISTICSb

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICSb

Turn-On Delay Time

tD(ON)

Rise Time

tr

Turn-Off Delay Time

tD(OFF)

Fall Time

tf

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VGS = 10V, VDS = 10V

VDS = 50V, ID = 5.1A

VDS =25V, VGS = 0V

f =1.0MHZ

VDD = 125V,

ID = 5.6A,

VGS = 10V,

RGEN= 12Ω

VDS =200V, ID = 5.6A,

VGS =10V

4-28

10

A

4.4

S

630

PF

100

PF

40

PF

19 40 ns

11 30 ns

46 90 ns

10 30 ns

26 33 nC

5

nC

11

nC

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