CA3127 データシートの表示（PDF） - Intersil

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CA3127

High Frequency NPN Transistor Array

Intersil 

CA3127

August 1996

High Frequency NPN Transistor Array

Features

Description

• Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz

• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz

• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz

• Five Independent Transistors on a Common Substrate

Applications

• VHF Amplifiers

• Multifunction Combinations - RF/Mixer/Oscillator

The CA3127 consists of five general purpose silicon NPN

transistors on a common monolithic substrate. Each of the

completely isolated transistors exhibits low 1/f noise and a

value of fT in excess of 1GHz, making the CA3127 useful

from DC to 500MHz. Access is provided to each of the termi-

nals for the individual transistors and a separate substrate

connection has been provided for maximum application flexi-

bility. The monolithic construction of the CA3127 provides

close electrical and thermal matching of the five transistors.

Ordering Information

• Sense Amplifiers

• Synchronous Detectors

• VHF Mixers

• IF Converter

• IF Amplifiers

• Synthesizers

• Cascade Amplifiers

PART

NUMBER

(BRAND)

TEMP.

RANGE (oC)

PACKAGE

PKG.

NO.

CA3127E

-55 to 125 16 Ld PDIP

E16.3

CA3127M

(3127)

-55 to 125 16 Ld SOIC

M16.15

CA3127M96 -55 to 125 16 Ld SOIC Tape and Reel M16.15

(3127)

Pinout

CA3127

(PDIP, SOIC)

TOP VIEW

1

Q1

2

Q2

3

4

SUBSTRATE 5

6

Q3

7

8

16

15

14

13

Q5

12

11

Q4

10

9

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

5-1

File Number 662.3

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