BYT53G(2010) データシートの表示（PDF） - Vishay Semiconductors
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BYT53G Datasheet PDF : 4 Pages
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BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
Vishay Semiconductors Ultra Fast Avalanche Sinterglass
Diode
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Reverse recovery time
IF = 1 A
IF = 1 A, Tj = 175 °C
VR = VRRM
VR = VRRM, Tj = 150 °C
IF = 0.5 A, IR = 1 A, iR = 0.25 A
VF
-
VF
-
IR
-
IR
-
trr
-
TYP.
-
-
-
-
-
MAX.
1.1
0.9
5
200
50
UNIT
V
V
μA
μA
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120
100
80
60
l
l
40
20
0
0
949552
TL = constant
5
10 15 20 25 30
l - Lead Length (mm)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
2.0
1.8
VR = VRRM
half sine wave
1.6
1.4
RthJA = 45 K/W
l = 10 mm
1.2
1.0
0.8
0.6
0.4
RthJA = 100 K/W
PCB: d = 25 mm
0.2
0.0
0
16334
20 40 60 80 100 120 140 160 180
Tamb - Junction Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
10
Tj = 175 °C
1
0.1
Tj = 25 °C
0.01
0.001
0
0.5
1
1.5
2
2.5
3
16333
VF - Forward Voltage (V)
Fig. 2 - Max. Forward Current vs. Forward Voltage
1000
VR = VRRM
100
10
1
25 50 75 100 125 150 175
16335
Tj - Junction Temperature (°C)
Fig. 4 - Max. Reverse Current vs. Junction Temperature
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 86030
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.9, 04-Aug-10
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