BYV118 データシートの表示（PDF） - Philips Electronics

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BYV118

Rectifier diodes Schottky barrier

Philips Electronics 

Philips Semiconductors

Rectifier diodes

Schottky barrier

Product specification

BYV118, BYV118B series

THERMAL RESISTANCES

SYMBOL PARAMETER

Rth j-mb

Rth j-a

Thermal resistance junction

to mounting base

Thermal resistance junction

to ambient

CONDITIONS

per diode

both diodes

SOT78 package in free air

SOT404 package, pcb mounted, minimum

footprint, FR4 board

MIN.

-

-

-

-

TYP.

-

-

60

50

MAX. UNIT

4.5 K/W

3 K/W

- K/W

- K/W

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

VF

Forward voltage per diode IF = 5 A; Tj = 125˚C

IF = 10 A

IR

Reverse current per diode VR = VRWM

VR = VRWM; Tj = 100˚C

Cd

Junction capacitance per

VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C

diode

MIN.

-

-

-

-

-

TYP.

0.52

0.72

0.06

6

155

MAX. UNIT

0.6 V

0.87 V

0.5 mA

15 mA

- pF

May 1998

2

Rev 1.300

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