Philips Semiconductors
Damper diodes
Product specification
BY558; BY578
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
trr
reverse recovery time
VFRM
tfr
forward recovery voltage
forward recovery time
CONDITIONS
IF = 5 A; Tj = Tj max; see Fig.3
IF = 5 A; see Fig.3
VR = VRRMmax; Tj = 150 °C
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.6
IF = 5 A; dIF/dt = 50 A/µs; see Fig.5
IF = 5 A; dIF/dt = 50 A/µs; VF = 5 V;
see Fig.5
IF = 5 A; dIF/dt = 50 A/µs; VF = 2 V;
see Fig.5
TYP.
−
−
−
−
MAX. UNIT
1.3 V
1.7 V
175 µA
250 ns
15
20 V
260
350 ns
700
− ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
20
K/W
70
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4.
For more information please refer to the ‘General Part of Handbook SC01’.
1998 Jun 25
3