BUZ42 データシートの表示（PDF） - Intersil
部品番号
コンポーネント説明
一致するリスト
BUZ42 Datasheet PDF : 5 Pages
| |||
BUZ42
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ42
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500
500
4.0
16
±20
75
300
0.6
-55 to 150
E
V
V
A
A
V
W
mJ
W/oC
oC
-
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
-
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V
500
-
-
V
VGS(TH)
IDSS
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 500V, VGS = 0V
TJ = 125oC, VDS = 500V, VGS = 0V
2.1
3
4
V
-
20
250
µA
-
100 1000
µA
IGSS VGS = 20V, VDS = 0V
-
10
100
nA
rDS(ON) ID = 2.5A, VGS = 10V (Figure 8)
-
1.6 2.000
Ω
gfs
VDS = 25V, ID = 2.5A (Figure 11)
1.5 2.5
-
S
td(ON) VCC = 30V, ID ≈ 2.5A, VGS = 10V, RGS = 50Ω,
-
30
45
ns
tr
RL = 10Ω. (Figures 16, 17)
-
40
60
ns
td(OFF)
-
110
140
ns
tf
-
50
65
ns
CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
-
1500 2000
pF
COSS
-
110
170
pF
CRSS
RθJC
RθJA
-
40
70
pF
≤ 1.67
oC/W
≤ 75
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD
ISDM
VSD
trr
QRR
TC = 25oC
TC = 25oC
TJ = 25oC, ISD = 8A, VGS = 0V
TJ = 25oC, ISD = 4A, dISD/dt = 100A/µs,
VR = 100V
-
-
4.0
-
-
16
-
1.1
1.5
-
1200
-
-
6.0
-
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 25µH, RG = 25Ω, IPEAK = 4.5A. (See Figures 14 and 15).
UNITS
A
A
V
ns
µC
2
Share Link: 