BUW132A データシートの表示（PDF） - Inchange Semiconductor
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BUW132A Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)-BUW132
500V (Min)-BUW132A
APPLICATIONS
·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
BUW132
850
VCES
Collector- Emitter
Voltage(VBE= 0)
V
BUW132A
1000
BUW132
450
VCEO
Collector-Emitter
Voltage
V
BUW132A
500
VEBO
IC
ICM
IBB
IBM
PC
Tj
Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@TC=25℃
Junction Temperature
Storage Temperature Range
6
V
8
A
16
A
6
A
12
A
125
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W
isc Product Specification
BUW132/A
isc Website：www.iscsemi.cn
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