BUW12AF データシートの表示（PDF） - Philips Electronics

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BUW12AF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUW12F; BUW12AF

handbook, halfpage

VIM

0

tp

T

VCC

RL

RB

D.U.T.

MGE244

VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.

The values of RB and RL are selected in accordance with ICon and

IBon requirements.

Fig.12 Test circuit resistive load.

handbook, halfpage

90%

IB

10%

tr ≤30 ns

90%

MBB731

IB on

t

IB off

IC on

IC

10%

ton

tf

t

ts

tr ≤ 20 ns.

Fig.13 Switching time waveforms with

resistive load.

handbook, halfpage

+IB

−VBE

VCC

LC

LB

D.U.T.

VCL

MGE246

VCL = up to 1000 V; VCC = 30 V; VBE = −1 V to −5 V; LB = 1 µH;

LC = 200 µH.

Fig.14 Test circuit inductive load and reverse

bias SOAR.

1997 Aug 14

handbook, halfpage

tr

90%

IB

10%

90%

IB on

t

−IB off

IC on

IC

10%

tf

ts

toff

t

MGE238

Fig.15 Switching time waveforms with

inductive load.

9

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