BSP16T1 データシートの表示（PDF） - ON Semiconductor

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BSP16T1

High Voltage Transistors

ON Semiconductor 

BSP16T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collectorā-āEmitter Breakdown Voltage

(IC = -50 mAdc, IB = 0, L = 25 mH)

Collectorā-āBase Breakdown Voltage

(IC = -100 mAdc, IE = 0)

Collector-Emitter Cutoff Current

(VCE = -250 Vdc, IB = 0)

Collector-Base Cutoff Current

(VCB = -280 Vdc, IE = 0)

Emitter-Base Cutoff Current

(VEB = -6.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(VCE = -ā10 Vdc, IC = -50 mAdc)

Collector‐Emitter Saturation Voltage

(IC = -ā50 mAdc, IB = -ā5.0 mAdc)

DYNAMIC CHARACTERISTICS

Current Gain - Bandwidth Product

(VCE = -ā10 Vdc, IC = -10 mAdc, f = 30 MHz)

Collector-Base Capacitance

(VCB = -ā10 Vdc, IE = 0, f = 1.0 MHz)

Symbol

Min

V(BR)CEO

V(BR)CBO

ICES

ICBO

IEBO

-300

-300

-

-

-

hFE

30

VCE(sat)

-

fT

15

Cobo

-

Max

Unit

Vdc

-

Vdc

-

mAdc

-50

mAdc

-1.0

mAdc

-20

120

-

Vdc

-ā2.0

MHz

-

pF

15

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