BS62LV2008 データシートの表示（PDF） - Brilliance Semiconductor
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BS62LV2008 Datasheet PDF : 9 Pages
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BSI
BS62LV2008
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
Guaranteed Input Low
Voltage(3)
Guaranteed Input High
Voltage(3)
TEST CONDITIONS
Vcc=5.0V
Vcc=5.0V
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
ILO
Output Leakage Current
Vcc = Max, CE1= VIH, CE2= VIL, or
OE = VIH, VI/O = 0V to Vcc
VOL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
Vcc=5.0V
VOH
Output High Voltage
Vcc = Min, IOH = -1.0mA
Vcc=5.0V
ICC(5)
Operating Power Supply CE1 = VIL, CE2 = VIH,
Current
IDQ = 0mA, F = Fmax(2)
5.0 V
70ns
55ns
ICCSB
Standby Current-TTL
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA,
Vcc=5.0V
MIN. TYP. (1) MAX. UNITS
-0.5
--
0.8
V
2.2
--
Vcc+0.3
V
--
--
1
uA
--
--
1
uA
--
--
0.4
V
2.4
--
--
V
45
--
--
mA
55
--
--
1.0
mA
ICCSB1(4)
Standby Current-CMOS
CE1≧Vcc-0.2V or CE2≦0.2V,
VIN≧Vcc-0.2V or VIN≦0.2V
Vcc=5.0V
--
1.0
30
uA
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/tRC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. IccsB1 _Max. is 10uA at Vcc=5.0V and TA=70oC.
5. Icc_Max. is 53mA(@55ns) / 43mA(@70ns) at Vcc=5.0V and TA=0~70oC.
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VDR
Vcc for Data Retention
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
--
V
ICCDR(3)
Data Retention Current
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.1
1.0
uA
tCDR
Chip Deselect to Data
Retention Time
See Retention Waveform
tR
Operation Recovery Time
0
--
--
ns
TRC (2)
--
--
ns
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.7uA at TA=70oC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Vcc
CE1
Vcc
t CDR
VIH
Data Retention Mode
VDR ≥ 1.5V
CE1 ≥ Vcc - 0.2V
Vcc
tR
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
Vcc
Vcc
t CDR
VDR ≧ 1.5V
Vcc
tR
CE2
VIL
CE2 ≦ 0.2V
VIL
R0201-BS62LV2008
3
Revision 1.1
Jan. 2004
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