BS616LV8022 データシートの表示（PDF） - Brilliance Semiconductor

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BS616LV8022

Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

Brilliance Semiconductor 

BSI

„ DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )

PARAMETER

NAME

VIL

VIH

PARAMETER

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

Voltage(2)

TEST CONDITIONS

Vcc=3V

Vcc=5V

Vcc=3V

Vcc=5V

IIL

Input Leakage Current Vcc = Max, VIN = 0V to Vcc

IOL

VOL

VOH

ICC

ICCSB

Output Leakage Current

Output Low Voltage

Output High Voltage

Operating Power Supply

Current

Vcc = Max, CE1 = VIH , or CE2 = ViL, or

OE = VIH, VI/O = 0V to Vcc

Vcc= max, IOL = 2mA

Vcc= Min, IOH = -1mA

Vcc= max, CE1 = VIL and CE2 =

VIH, IDQ = 0mA, F = Fmax(3)

Vcc=3V

Vcc=5V

Vcc=3V

Vcc=5V

Vcc=3V

Vcc=5V

Standby Current-TTL

Vcc= max, CE1 = VIH or CE2 =

VIL, IDQ = 0mA

Vcc=3V

Vcc=5V

ICCSB1

Standby Current-CMOS

Vcc= max,CE1 Њ Vcc-0.2V, or

CE2 Љ 0.2V; VIN Њ Vcc - 0.2V

or VIN Љ 0.2V

Vcc=3V

Vcc=5V

BS616LV8022

MIN. TYP. (1) MAX.

-0.5

--

0.8

-0.5

--

0.8

2.0

--

Vcc+0.2

2.2

--

Vcc+0.2

--

--

1

--

--

1

--

--

0.4

--

--

0.4

2.4

--

--

2.4

--

--

--

--

20

--

--

45

--

--

1

--

--

2

--

0.5

3

--

3

30

UNITS

V

V

uA

uA

V

V

mA

mA

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/ tRC .

R0201-BS616LV8022

4

Revision 2.4

April 2002

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