BS616LV4021 データシートの表示（PDF） - Brilliance Semiconductor

部品番号

コンポーネント説明

一致するリスト

BS616LV4021

Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV4021

„ DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)

PARAMETER

NAME

VIL

VIH

PARAMETER

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

Voltage(2)

TEST CONDITIONS

IIL

Input Leakage Current Vcc = Max, VIN = 0V to Vcc

Vcc=3V

Vcc=5V

Vcc=3V

Vcc=5V

MIN. TYP. (1) MAX.

-0.5

--

0.8

-0.5

--

0.8

2.0

--

Vcc+0.2

2.2

--

Vcc+0.2

--

--

1

IOL

Output Leakage Current

Vcc = Max, CE1 = VIH or CE2=VIL or OE =

VIH, VI/O = 0V to Vcc

--

--

1

VOL

Output Low Voltage

Vcc = Max, I OL = 2mA

VOH

Output High Voltage

Vcc = Min, I OH = -1mA

Vcc=3V

--

--

0.4

Vcc=5V

--

--

0.4

Vcc=3V 2.4

--

--

Vcc=5V 2.4

--

--

Vcc=3V

--

--

20

ICC

Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH

Current

IDQ = 0mA, F = Fmax(3)

Vcc=5V

--

--

45

UNITS

V

V

uA

uA

V

V

mA

Vcc=3V

--

--

1

ICCSB

Standby Current-TTL

Vcc = Max, CE1 = VIH or CE2=VIL

IDQ = 0mA

mA

Vcc=5V

--

--

2

Vcc = Max, CE1ЊVcc-0.2V or

Vcc=3V

--

0.25

1.5

ICCSB1

Standby Current-CMOS CE2Љ0.2V; VINЊ Vcc - 0.2V or

uA

VINЉ0.2V

Vcc=5V

--

1.5

15

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

R0201-BS616LV4021

4

Revision 2.4

April 2002

Share Link: