BS616LV1623TI データシートの表示（PDF） - Brilliance Semiconductor

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BS616LV1623TI

Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

Brilliance Semiconductor 

BSI

BS616LV1623

„ DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )

PARAMETER

NAME

VIL

PARAMETER

Guaranteed Input Low

Voltage(3)

TEST CONDITIONS

Vcc=3V

VIH

Guaranteed Input High

Voltage(3)

Vcc=3V

IIL

Input Leakage Current Vcc = Max, VIN = 0V to Vcc

ILO

Output Leakage Current

Vcc = Max, CE1 = VIH, or CE2 =ViL, or

OE = VIH, VI/O = 0V to Vcc

VOL

Output Low Voltage

Vcc = Max, IOL= 2mA

Vcc=3V

VOH

Output High Voltage

Vcc = Min, IOH= -1mA

Vcc=3V

(4)

ICC

ICCSB

(5)

ICCSB1

Operating Power Supply

Current

Standby Current-TTL

CE1 = VIL and CE2 = VIH

, IDQ = 0mA, F = Fmax(2)

CE1 = VIH or CE2 = VIL

, IDQ = 0mA

55ns

70ns

Standby Current-CMOS

CE1≧Vcc-0.2V, or

CE2≦0.2V, VIN≧ Vcc - 0.2V

or VIN≦ 0.2V

Vcc=3V

Vcc=3V

Vcc=3V

MIN. TYP. (1) MAX.

UNITS

-0.5

--

0.8

V

2.0

--

Vcc+0.3

V

--

--

1

uA

--

--

1

uA

--

--

0.4

V

2.4

--

--

V

--

--

46

mA

--

--

37

--

--

1.3

mA

--

3

20

uA

1. Typical characteristics are at TA = 25oC.

2. Fmax = 1/tRC .

3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

4. Icc_Max. is 45mA(@55ns) / 36mA(@70ns) during 0~70oC operation.

5. IccsB1 is 10uA at Vcc=3.0V and TA=70oC.

R0201-BS616LV1623

4

Revision 1.1

Jan. 2004

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