BD8160AEFV-E2 データシートの表示（PDF） - ROHM Semiconductor

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BD8160AEFV-E2

12V Input Multi-channel System Power Supply IC

ROHM Semiconductor 

BD8160AEFV

Technical Note

●Electrical characteristics (unless otherwise specified VIN=12V and Ta=25°C)

1. DC/DC converter controller block

Parameter

Symbol

Limits

Min

Typ

Max

Soft start – SS

SS source current

ISO

6

10

14

Error amplifier block – FB and FBB

FB and FBB input bias current

IFB12

-

0.1

2

Feedback voltage for boost converter

Feedback voltage for buck converter

VFB

VFBB

1.150

1.188

1.162

1.213

1.174

1.238

SW block – SW

On resistance N-channel

RONN

-

0.2

0.3

Leak current N-channel

Switch current limit for SW

ILEAKN1

-

0

10

ISW

2.6

-

-

Maximum duty cycle

SW block – SWB

MDUTY

75

90

97

On resistance N-channel

Leak current N-channel

RONH

-

0.2

0.3

ILEAKN2

-

0

10

Switch current limit for SWB

Protections

ISWB

2.0

-

-

Over Voltage Protection for SW

VSWOVP

18.5

19

19.5

2. Charge pump driver block

Parameter

Error amplifier block – FBP and FBN

FBP, FBN input bias current

Feedback voltage for VGH

Feedback voltage for VGL

Delay start block

DLY1, DLY2 source current

DRP, DRN block

On resistance N-channel

On resistance P-channel

Symbol

Min

IFBP, IFBN

VFBP

VFBN

-

1.188

0.18

IDLY1, IDLY2

2

RONN

-

RONP

-

Limits

Typ

0.1

1.213

0.2

5

5

3

Max

1

1.238

0.22

9

-

-

Unit

Conditions

µA VSS=0.5V

µA

V Voltage follower

V

Ω IO=0.8A

µA VSW =18V

A

% FB= 0V

Ω IO=0.8A

µA VINB=18V , VSWB =0V

A

V

Unit

Conditions

µA

V

V

µA VDLY=0.5V

Ω IO=20mA

Ω IO=20mA

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© 2009 ROHM Co., Ltd. All rights reserved.

2/18

2009.07 - Rev.B

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