BD636 データシートの表示（PDF） - Inchange Semiconductor

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BD636

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD636

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= -0.1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB=B -0.1A

VBE(on) Base-Emitter On Voltage

IC= -1A; VCE= -2V

ICES

Collector Cutoff Current

VCE= -60V; VBE= 0

hFE-1

DC Current Gain

IC= -25mA; VCE= -2V

hFE-2

DC Current Gain

IC= -1A; VCE= -2V

MIN MAX UNIT

-60

V

-60

V

-5

V

-0.6

V

-1.3

V

-0.2 mA

40

25

isc Website：www.iscsemi.cn

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