BD410 データシートの表示（PDF） - Comset Semiconductors
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BD410 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
BD410
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO
VCBO
VEBO
ICES
VCE(SAT)
VBE
hFE
Collector-Emitter
Breakdown Voltage (*)
Collector-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff Current
Collector-Emitter
saturation Voltage (*)
IC= 10 mA, IB= 0
IC= 0.5 mA, IE= 0
IE= 50 µA, IC= 0
VCE = 300 V, IB= 0
IC= 100 mA, IB= 10 mA
Base-Emitter Voltage (*) IC= 100 mA, IB= 10 mA
DC Current Gain (*)
IC= 5 mA, VCE= 10 V
IC= 50 mA, VCE= 10 V
IC= 100 mA, VCE= 10 V
SWITCHING TIMES.
Min Typ Max Unit
325 -
-
V
500 -
-
V
5
-
-
V
-
- 100 µA
-
- 0.5 V
-
- 1.5 V
25 -
-
30 - 240 -
20 -
-
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
Cobo
Output Capacitance
IE= 0, VCB= 10 V, f= 1 MHz
- 5.5 -
pF
Cibo
Input Capacitance
IE= 0, VCB= 0.5 V, f= 1 MHz
- 90 -
(*) These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle ∠ 2%
25/09/2012
COMSET SEMICONDUCTORS
2/3
05/11/2012
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