BD2220G データシートの表示（PDF） - ROHM Semiconductor

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BD2220G

1ch Small Package High Side Switch ICs for USB Devices and Memory Cards

ROHM Semiconductor 

BD2220G, BD2221G

Technical Note

●Electrical Characteristics (VIN= 5V, Ta= 25℃, unless otherwise specified.)

DC Characteristics

Parameter

Limits

Symbol

Min.

Typ.

Max.

Operating current

IDD

-

110

160

Standby current

EN(/EN) input voltage

EN(/EN) input leakage

ISTB

-

0.01

5

VEN(/EN)

2.0

-

-

VEN(/EN)

-

-

0.8

IEN(/EN)

-1.0

0.01

1.0

Unit

Conditions

VEN = 5V (BD2220G)

μA V/EN = 0V (BD2221G)

VOUT = open

VEN = 0V (BD2220G)

μA V/EN = 5V (BD2221G)

VOUT = open

V High input

V Low input

μA VEN(/EN) = 0V or 5V

On-resistance

RON

-

160

210

mΩ IOUT = 50mA

Switch leak current

ILSW

-

-

1.0

μA VEN(/EN) = 0V, VOUT = 0V

Reverse leak current

IREV

-

-

1.0

μA VOUT = 5.5V, VIN = 0V

Over-current threshold

ITH

0.5

-

1.0

A

Short circuit output current

ISC

0.35

-

-

A VOUT = 0V, RMS

/OC output low voltage

UVLO threshold

AC Characteristics

Parameter

Output rise time

V/OC

-

-

0.4

V I/OC = 0.5mA

VTUVH

2.1

2.3

2.5

V VIN increasing

VTUVL

2.0

2.2

2.4

V VIN decreasing

Limits

Symbol

Unit

Min.

Typ.

Max.

Conditions

TON1

-

1

6

ms RL = 20Ω

Output turn-on time

TON2

-

1.5

10

ms RL = 20Ω

Output fall time

TOFF1

-

1

20

μs RL = 20Ω

Output turn-off time

TOFF2

-

3

40

μs RL = 20Ω

/OC delay time

T/OC

10

15

20

ms

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2/12

2011.05 - Rev.B

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