BCR8 データシートの表示（PDF） - MITSUBISHI ELECTRIC
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BCR8 Datasheet PDF : 11 Pages
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Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
BCR8CS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
4
10.5 MAX
TYPE
∗
NAME
VOLTAGE
CLASS
1
5
0.8
Dimensions
in mm
4.5
1.3
0
+0.3
–0
0.5
• IT (RMS) ........................................................................ 8A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # ............................................ 20mA
APPLICATION
Solid state relay, hybrid IC
123
∗ Measurement
point of case
24
temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
4 T2 TERMINAL
TO-220S
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class
12
600
720
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
✽1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=105°C✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
Ratings
Unit
8
A
80
A
26
A2s
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
1.2
g
Mar. 2002
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