BCR5KM-8 データシートの表示（PDF） - Mitsumi

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BCR5KM-8

MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

Mitsumi 

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

160

TYPICAL EXAMPLE

140

120

100

80

60

40

20

0

–60 –40 –20 0 20 40 60 80 100 120 140

JUNCTION TEMPERATURE (°C)

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

103

7

IRGT III TYPICAL EXAMPLE

5

4

3

2 IRGT I

102

7 IFGT I

5

4

3

2

101100 2 3 4 5 7 101 2 3 4 5 7 102

GATE TRIGGER PULSE WIDTH (µs)

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR5KM

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

BREAKOVER VOLTAGE VS.

RATE OF RISE OF

OFF-STATE VOLTAGE

160

TYPICAL EXAMPLE

Tj = 125°C

140

120

100

I QUADRANT

80

60

40

III QUADRANT

20

0

101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

6Ω

6Ω

6V

A

6V

A

RG

RG

V

V

TEST PROCEDURE

6Ω

TEST PROCEDURE

6V

A

RG

V

TEST PROCEDURE

Feb.1999

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