BCR2PM-12RE(2014) データシートの表示（PDF） - Renesas Electronics
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BCR2PM-12RE Datasheet PDF : 7 Pages
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BCR2PM-12RE
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Ratings
2
10
0.41
1
0.1
6
1
– 40 to +150
– 40 to +150
2.0
Preliminary
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
IDRM
—
—
1.0
mA Tj = 150°C, VDRM applied
On-state voltage
VTM
—
—
1.6
V Tj = 25°C, ITM = 1.5 A,
Instantaneous measurement
Gate trigger voltageNote2
Gate trigger currentNote2
ΙΙ
VRGTΙ
—
ΙΙΙ
VRGTΙΙΙ
—
ΙΙ
IRGTΙ
—
ΙΙΙ
IRGTΙΙΙ
—
—
2.0
V Tj = 25°C, VD = 6 V, RL = 6 Ω,
—
2.0
V
RG = 330 Ω
—
10
mA Tj = 25°C, VD = 6 V, RL = 6 Ω,
—
10
mA RG = 330 Ω
Gate non-trigger voltage
Thermal resistance
VGD
0.1
—
—
V Tj = 150°C, VD = 1/2 VDRM
Rth (j-a)
—
—
45 °C/W Junction to ambient,
Natural convection
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
R07DS1239EJ0200 Rev.2.00
Dec 24, 2014
Page 2 of 6
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