BCR10PM-12LA データシートの表示（PDF） - Renesas Electronics
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BCR10PM-12LA Datasheet PDF : 8 Pages
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BCR10PM-12LA
Holding Current vs.
Junction Temperature
103
7
Typical Example
5
4
3
2
102
7
5
4
3
2
101
–60 –40–20 0 20 40 60 80 100 120140
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120140
Junction Temperature (°C)
Commutation Characteristics
7
5 Main Voltage
Time Typical Example
(dv/dt)c
VD Tj = 125°C
3
Main Current
IT
2
(di/dt)c
τ Time
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
7
5
Minimum
Characteristics
Value
3
I Quadrant
2
III Quadrant
100
7
100 2 3 5 7 101 2 3 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0104EJ0300 Rev.3.00
Sep 13, 2010
Preliminary
Latching Current vs.
Junction Temperature
103
7
5
3
2
Distribution T2+, G–
102
Typical Example
7
5
3
2
101
7
5
3
2
T2+, G+
T2–, G–
Typical Example
100
–40 0
40 80 120 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140
Tj = 125°C
120
100
80
60
40
III Quadrant
20
I Quadrant
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
Typical Example
5
IFGT I
4
3
IRGT I
2
IRGT III
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
Gate Current Pulse Width (μs)
Page 5 of 7
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