BC856T データシートの表示（PDF） - Infineon Technologies
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BC856T Datasheet PDF : 6 Pages
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Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 10 µA, VCE = 5 V
IC = 10 µA, VCE = 5 V
IC = 2 mA, VCE = 5 V
IC = 2 mA, VCE = 5 V
BC856AT
BC856BT
BC856AT
BC856BT
V(BR)CEO 65
-
-V
V(BR)CBO 80
-
-
V(BR)CES 80
-
-
V(BR)EBO 5
-
-
ICBO
-
-
15 nA
ICBO
-
-
5 µA
hFE
-
-
140
-
-
250
-
125 180 250
220 290 475
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
mV
-
90 300
-
250 650
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
mV
-
700
-
-
850
-
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
600 650 750
-
-
820
1) Pulse test: t < 300s; D < 2%
2
Jan-08-2002
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