C369 データシートの表示（PDF） - NXP Semiconductors.

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C369

PNP medium power transistor; 20 V, 1 A

NXP Semiconductors. 

NXP Semiconductors

PNP medium power transistor;

20 V, 1 A

Product data sheet

BC369

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

ICBO

IEBO

hFE

VCEsat

VBE

Cc

fT

collector-base cut-off current

VCB = −25 V; IE = 0 A

−

−

−100 nA

emitter-base cut-off current

VCB = −25 V; IE = 0 A; Tj = 150 °C

−

−

−10 μA

VEB = −5 V; IC = 0 A

−

−

−100 nA

DC current gain

BC369

VCE = −10 V; IC = −5 mA

VCE = −1 V; IC = −500 mA

VCE = −1 V; IC = −1 A

50 −

−

85 −

375

60 −

−

BC369-16

VCE = −1 V; IC = −500 mA

100 −

BC369-25

VCE = −1 V; IC = −500 mA

160 −

collector-emitter saturation voltage IC = −1 A; IB = −100 mA

−

−

base-emitter voltage

VCE = −10 V; IC = −5 mA

−

−

VCE = −1 V; IC = −1 A

−

−

collector capacitance

VCB = −10 V; IE = ie = 0 A; f = 1 MHz −

28

250

375

−500 mV

−700 mV

−1 V

−

pF

transition frequency

VCE = −5 V; IC = −50 mA; f = 100 MHz 40 140 −

MHz

2004 Nov 05

5

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