BAW56T(2009) データシートの表示（PDF） - Diodes Incorporated.

部品番号

コンポーネント説明

一致するリスト

BAW56T
(Rev.:2009)

SURFACE MOUNT FAST SWITCHING DIODE

Diodes Incorporated. 

Features

• Ultra-Small Surface Mount Package

• Fast Switching Speed

• For General Purpose Switching Applications

• High Conductance

• Lead Free/RoHS Compliant (Note 1)

• "Green" Device (Note 3 and 4)

BAS16T, BAW56T,

BAV70T, BAV99T

SURFACE MOUNT FAST SWITCHING DIODE

Please click here to visit our online spice models database.

Mechanical Data

•

•

•

•

•

•

•

•

•

SOT-523

Case: SOT-523

Case Material - Molded Plastic. UL Flammability Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish)

Polarity: See Diagrams Below

Marking Information: See Diagrams Below & Page 2

Ordering Information: See Page 2

Weight: 0.002 grams (approximate)

TOP VIEW

BAS16T Marking: A2

BAW56T Marking: JD

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Forward Continuous Current (Note 2)

Repetitive Peak Forward Current

Non-Repetitive Peak Forward Surge Current

Single Diode

Double Diode

@ t = 1.0μs

@ t = 1.0ms

@ t = 1.0s

Symbol

VRRM

VRWM

VR

VR(RMS)

IFM

IFRM

IFSM

BAV70T Marking: JJ

Value

85

60

155

75

500

4.0

1.0

0.5

BAV99T Marking: JE

Unit

V

V

mA

mA

A

Thermal Characteristics

Characteristic

Power Dissipation (Note 2)

Thermal Resistance Junction to Ambient (Note 2)

Operating and Storage Temperature Range

Symbol

PD

RθJA

TJ, TSTG

Value

150

833

-65 to +150

Unit

mW

°C/W

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Reverse Breakdown Voltage (Note 5)

Forward Voltage

Leakage Current (Note 5)

Total Capacitance

Reverse Recovery Time

Symbol Min

V(BR)R

85

VF

⎯

IR

⎯

CT

⎯

trr

⎯

Typ

Max

Unit

Test Condition

⎯

⎯

V IR = 100μA

0.715

IF = 1.0mA

⎯

0.855

1.0

V IF = 10mA

IF = 50mA

1.25

IF = 150mA

2.0

μA VR = 75V

⎯

100

60

μA VR = 75V, TJ = 150°C

μA VR = 25V, TJ = 150°C

30

nA VR = 25V

1.5

⎯

pF VR = 0, f = 1.0MHz

⎯

4.0

ns IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100Ω

Notes: 1. No purposefully added lead.

2. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

5. Short duration pulse test used to minimize self-heating effect.

BAS16T, BAW56T,

BAV70T, BAV99T

Document number: DS30260 Rev. 10 - 2

1 of 3

www.diodes.com

March 2009

© Diodes Incorporated

Share Link: