BAP50-05W データシートの表示（PDF） - Philips Electronics
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BAP50-05W Datasheet PDF : 8 Pages
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Philips Semiconductors
General purpose PIN diode
Product specification
BAP50-05W
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per diode
VF
forward voltage
VR
reverse voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
|s21|2
isolation
|s21|2
insertion loss
|s21|2
insertion loss
|s21|2
insertion loss
τL
charge carrier life time
LS
series inductance
IF = 50 mA
−
IR = 10 µA
50
VR = 50 V
−
VR = 0; f = 1 MHz
−
VR = 1 V; f = 1 MHz
−
VR = 5 V; f = 1 MHz
−
IF = 0.5 mA; f = 100 MHz; note 1 −
IF = 1 mA; f = 100 MHz; note 1 −
IF = 10 mA; f = 100 MHz; note 1 −
VR = 0; f = 900 MHz
−
VR = 0; f = 1800 MHz
−
VR = 0; f = 2450 MHz
−
IF = 0.5 mA; f = 900 MHz
−
IF = 0.5 mA; f = 1800 MHz
−
IF = 0.5 mA; f = 2450 MHz
−
IF = 1 mA; f = 900 MHz
−
IF = 1 mA; f = 1800 MHz
−
IF = 1 mA; f = 2450 MHz
−
IF = 10 mA; f = 900 MHz
−
IF = 10 mA; f = 1800 MHz
−
IF = 10 mA; f = 2450 MHz
−
when switched from IF = 10 mA to −
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
−
0.95 1.1 V
−
−
V
−
100 nA
0.45 −
pF
0.35 0.6 pF
0.3 0.5 pF
25
40
Ω
14
25
Ω
3
5
Ω
19
−
dB
15.7 −
dB
13.5 −
dB
1.84 −
dB
1.90 −
dB
1.92 −
dB
1.08 −
dB
1.13 −
dB
1.17 −
dB
0.26 −
dB
0.30 −
dB
0.36 −
dB
1.05 −
µs
1.6 −
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2001 Apr 17
3
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