datasheetbank_Logo
データシート検索エンジンとフリーデータシート

BA5984FP データシートの表示(PDF) - ROHM Semiconductor

部品番号
コンポーネント説明
一致するリスト
BA5984FP
ROHM
ROHM Semiconductor ROHM
BA5984FP Datasheet PDF : 6 Pages
1 2 3 4 5 6
5/5
(15) About earth wiring patterns
When a small signal GND and a large current GND are provided, it is recommended that the large
current GND pattern and the small signal GND pattern should be separated and grounded at a single
point of the reference point of the set in order to prevent the voltage of the small signal GND from being
affected by a voltage change caused by the resistance of the pattern wiring and the large current.
Make sure that the GND wiring patterns of the external components will not change, too.
(16) This IC is a monolithic IC which has a P+ isolations and P substrate to isolate elements each other.
This P layer and an N layer in each element form a PN junction to construct various parasitic elements.
Due to the IC structure, the parasitic elements are inevitably created by the potential relationship.
Activation of the parasitic elements can cause interference between circuits and may result in a
malfunction or, consequently, a fatal damage. Therefore, make sure that the IC must not be used
under conditions that may activate the parasitic elements, for example, applying the lower voltage than
the ground level (GND, P substrate) to the input terminals.
In addition, do not apply the voltage to input terminals without applying the power supply voltage to the
IC. Also while applying the power supply voltage, the voltage of each input terminal must not be over
the power supply voltage, or within the guaranteed values in the electric characteristics.
REV. A

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]