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AVS1ACP08(1995) データシートの表示(PDF) - STMicroelectronics

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AVS1ACP08
(Rev.:1995)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
AVS1ACP08 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
AVS10
BLOCK DIAGRAM
AVS1ACP08
VSS 1
VDD 4
Supply
Reset
VM 8
Peak Voltage Parasitic
Dectector
Filter
Zero Crossing
Detector
OSC/IN 2
OSC/OUT 3
Oscillator
MODE
7
MR
Mains
mode
CP Controller Q
S
Triggering Q
CP Time
Controller
AVS10CB
or
AVS10CBI
A2
2
VG
5
VDD
4
G
3
1
A1
ABSOLUTE MAXIMUM RATINGS
CONTROLLER AVS1ACP08
Symbol
Parameter
VSS
VI / VO
II / IO
Tstg
Toper
Supply voltage
I / O voltage
I / O current
Storage Temperature
Operating Temperature code ” C ”
V al u e
Min.
Max.
- 12
0.5
VSS - 0.5
0.5
- 40
+ 40
- 60
+ 150
0
+ 70
Un it
V
V
mA
°C
°C
TRIAC AVS10CB / AVS10CBI Tj = +25°C (unless otherwise specified)
Symbol
Parameter
VDRM Repetitive peak off-state voltage (2)
IT(RMS)
RMS on-state current
(360° conduction angle)
AVS10CB TC = 80°C
AVS10CBI TC = 70°C
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25°C )
t = 8.3ms
t = 10ms
V al u e
± 600
8
85
80
Un it
V
A
A
I2t
I2t value
t = 10ms
32
A2s
dI/dt
Critical rate of rise of on-state current (1)
Repetitive
F = 50Hz
Non
Repetitive
20
A/µs
100
dv/dt * Linear slope up to 0.67 VDRM Gate open
Tj = 110°C
50
V/µs
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(1) Gate supply : IG = 100mA – di/dt = 1A/µs
(2) Tj = 110°C
- 40 + 150
0 + 110
°C
* For either polarity of electrode A2 voltage with reference to electrode A1
2/8

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