AV2001M データシートの表示（PDF） - Avic Technology

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AV2001M

TO-92 Plastic -Encapsulate Transistors

Avic Technology 

@vic

TO-92 Plastic-Encapsulate Transistors

AV2001

AV2001 TRANSISTOR（NPN ）

FEATURES

Power dissipation

PCM : 0.6

Collector current

ICM : 0.7

Collector-base voltage

V(BR)CBO : 30

W （Tamb=25℃）

A

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

TO— 92

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

CLASSIFICATION OF hFE

Rank

Range

M

90-180

Symbol Test conditions

V(BR)CBO Ic=1００µA ， IE=0

V(BR)CEO IC=10mA , IB=0

V(BR)EBO IE=100µA， IC=0

ICBO

VCB=30 V , IE=0

ICEO

VCE=20 V , IB=0

IEBO

VEB=5 V , IC=0

hFE

VCE=1V, IC=100m A

VCE(sat) IC=700mA, IB= 70m A

VBE(sat)

fT

IC= 700mA, IB=70mA

VCE=6V, IC= 10mA

f = 30MHz

MIN MAX UNIT

30

V

25

V

5

　　V

0.1

µA

0.1

µA

0.1

µA

90

400

0.6

V

1.2

V

50

MHz

L

135-270

K

200-400

Copyright @vic Electronics Corp.

1

Website http://www.avictek.com

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