ATF-35143 データシートの表示（PDF） - HP => Agilent Technologies
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ATF-35143 Datasheet PDF : 19 Pages
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ATF-35143 Typical Performance Curves
30
OIP3
25
20
15
P1dB
10
2V
5
3V
4V
0
0 10 20 30 40 50 60
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. Bias at
2GHz. [1,2]
30
25
OIP3
20
15
P1dB
10
2V
3V
4V
5
0 10 20 30 40 50 60
IDSQ (mA)
Figure 7. OIP3 and P1dB vs. Bias at
900MHz. [1,2]
20
19
Ga
2.5
2V
3V
4V 2
24
22
Ga
2.5
2V
3V
4V 2
18
1.5
20
1.5
17
1
18
1
NF
NF
16
0.5
16
0.5
15
0
0 10 20 30 40 50 60
IDSQ (mA)
Figure 8. NF and Ga vs. Bias at 2GHz. [1]
14
0
0 10 20 30 40 50 60
IDSQ (mA)
Figure 9. NF and Ga vs. Bias at
900MHz. [1]
25
20
15
10
5
0
2V
3V
4V
-5
0
20
40
60
80
IDS (mA)
Figure 10. P1dB vs. Bias (Active Bias)
[1]
20
15
10
5
0
2V
3V
4V
-5
0
20
40
60
80
IDS (mA)
Figure 11. P1dB vs. Bias (Active Bias)
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V
15␣ mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on
production test board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS
= 4 V and IDSQ␣ =␣ 5␣ mA, Id increases to 30 mA as a P1dB of +15 dBm is approached.
4
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