AS1335 データシートの表示（PDF） - austriamicrosystems AG

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AS1335

1.5A, 1.5MHz, Synchronous DC/DC Step-Down Converter

austriamicrosystems AG 

AS1335

Datasheet - Application Information

Efficiency

The efficiency of a switching regulator is equivalent to:

Efficiency = (POUT/PIN)x100%

(EQ 7)

For optimum design, an analysis of the AS1335 is needed to determine efficiency limitations and to determine design

changes for improved efficiency. Efficiency can be expressed as:

lid Efficiency = 100% – (L1 + L2 + L3 + ...)

(EQ 8)

Where:

L1, L2, L3, etc. are the individual losses as a percentage of input power.

a Althought all dissipative elements in the circuit produce losses, those four main sources should be considered for effi-

ciency calculation:

v Input Voltage Quiescent Current Losses

ill The VIN current is the DC supply current given in the electrical characteristics which excludes MOSFET driver and con-

trol currents. VIN current results in a small (<0.1%) loss that increases with VIN, even at no load. The VIN quiescent cur-

rent loss dominates the efficiency loss at very low load currents.

G t I²R Losses

s Most of the efficiency loss at medium to high load currents are attributed to I²R loss, and are calculated from the resis-

A t tances of the internal switches (RSW) and the external inductor (RL). In continuous mode, the average output current

flowing through inductor L is split between the internal switches. Therefore, the series resistance looking into the SW

pin is a function of both NMOS & PMOS RDS(ON) as well as the the duty cycle (DC) and can be calculated as follows:

s en RSW = (RDS(ON)PMOS)(DC) + (RDS(ON)NMOS)(1 – DC)

(EQ 9)

m t The RDS(ON) for both MOSFETs can be obtained from the Electrical Characteristics on page 4. Thus, to obtain I²R

a n losses calculate as follows:

o I²R losses = IOUT²(RSW + RL)

(EQ 10)

Switching Losses

c The switching current is the sum of the control currents and the MOSFET driver. The MOSFET driver current results

l from switching the gate capacitance of the power MOSFETs. If a MOSFET gate is switched from low to high to low

again, a packet of charge dQ moves from VIN to ground. The resulting dQ/dt is a current out of VIN that is typically

a much larger than the DC bias current. In continuous mode:

IGC = f(QPMOS + QNMOS)

(EQ 11)

ic Where: QPMOS and QNMOS are the gate charges of the internal MOSFET switches.

n The losses of the gate charges are proportional to VIN and thus their effects will be more visible at higher supply volt-

ages.

h Other Losses

c Basic losses in the design of a system should also be considered. Internal battery resistances and copper trace can

e account for additional efficiency degradations in battery operated systems. By making sure that CIN has adequate

charge storage and very low ESR at the given switching frequency, the internal battery and fuse resistance losses can

Tbe minimized. CIN and COUT ESR dissipative losses and inductor core losses generally account for less than 2% total

additional loss.

www.austriamicrosystems.com/DC-DC_Step-Down/AS1335

Revision 1.03

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